Gate insulator layer for electronic devices

Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloole...

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Bibliographic Details
Main Authors RHODES, LARRY F, FUJITA, KAZUYOSHI, MISKIEWICZ, PAWEL, KANDANARACHCHI, PRAMOD, CULL, TOBY, CARRASCO-OROZCO, MIGUEL, BELL, ANDREW, NG, HENDRA, MUELLER, DAVID CHRISTOPH, SMITH, STEVEN, ELCE, EDMUND
Format Patent
LanguageEnglish
French
German
Published 13.07.2016
Subjects
CHEMISTRY
COMPOSITIONS BASED THEREON
ELECTRICITY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices.
Bibliography:Application Number: EP20130004590