POWER SEMICONDUCTOR MODULE AND METHOD TO PRODUCE A POWER SEMICONDUCTOR MODULE

• Main Authors: SCHULZ, Nicola, KICIN, Slavo, FABIAN, Jan-Henning, HÄFNER, Jürgen, HAMIDI, Amina, LIU, Chunlei
• Format: Patent
• Language: English; French; German
• Published: 14.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device (509a, b) comprises a semiconductor chip (504a, b) comprising a bottom electrode and a top electrode and a bottom electrode- baseplate (502). The bottom electrode-baseplate (502) is electrically and thermally conductive. The semiconductor device (509a, b) comprises a top electrode- baseplate (508). The top electrode-baseplate (508) is electrically and thermally conductive. The semiconductor device (509a, b) comprises a first preform (506a, b) made of material configured for supporting a creation of an electrically conductive alloy when being melted. In order to provide a semiconductor device having enhanced characteristics, the bottom electrode of the semiconductor chip (504a, b) is thermally and electrically connected to the bottom electrode-baseplate (502) via a first bonding layer (618), the top electrode of the semiconductor chip (504a, b) is thermally and electrically connected to a first side of the first preform (506a, b) via a second bonding layer (620), and the second side of the first preform (506a, b) is thermally and electrically connected to the top electrode- baseplate (508) via a third bonding layer (624).