Methods of producing a semiconductor device with a through-substrate via

The semiconductor device comprises a substrate (1) of semiconductor material with a main surface (11) and an opposite surface (12), an integrated circuit component (2) in the substrate at or near the main surface, a structured metal plane (3) at a distance from the substrate above the main surface,...

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Bibliographic Details
Main Authors Löffler, Bernhard, Rohracher, Karl, Schrank, Franz, Siegert, Jörg, Kraft, Jochen
Format Patent
LanguageEnglish
French
German
Published 12.06.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The semiconductor device comprises a substrate (1) of semiconductor material with a main surface (11) and an opposite surface (12), an integrated circuit component (2) in the substrate at or near the main surface, a structured metal plane (3) at a distance from the substrate above the main surface, a dielectric layer (4) between the metal plane and the substrate, an electrical interconnect (5) between the metal plane and the integrated circuit component, the interconnect traversing the dielectric layer, and an interconnection via (6) comprising a metallization (7) leading through the substrate between the main surface and the opposite surface. The metallization is connected to the metal plane via a further electrical interconnect (8) traversing the dielectric layer.
Bibliography:Application Number: EP20120163391