SEMICONDUCTOR JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR JUNCTION STRUCTURE

Obtaining a semiconductor bonding structure body that has a superior stress alleviation property, and has a heat resistance property at the same time. A bonding structure body in which a semiconductor element (102) and an electrode (103) are bonded via a solder material, wherein a part (212) that al...

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Main Authors SAKATANI, Shigeaki, NAKAMURA, Taichi, FURUSAWA, Akio, ISHIMARU, Yukihiro, KITAURA, Hidetoshi
Format Patent
LanguageEnglish
French
German
Published 07.02.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Obtaining a semiconductor bonding structure body that has a superior stress alleviation property, and has a heat resistance property at the same time. A bonding structure body in which a semiconductor element (102) and an electrode (103) are bonded via a solder material, wherein a part (212) that allows bonding has a first intermetallic compound layer (207') that has been formed on the electrode side, a second intermetallic compound layer (208') that has been formed on the semiconductor element side, and a third layer (300) that is constituted by a phase (210) containing Sn and a sticks-like intermetallic compound part (209'), which is sandwiched between the two layers of the first intermetallic compound layer (207') and the second intermetallic compound layer (208'), and the sticks-like intermetallic compound part (209') is interlayer-bonded to both of the first intermetallic compound layer (207') and the second intermetallic compound layer (208').
Bibliography:Application Number: EP20110834024