SEMICONDUCTOR JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR JUNCTION STRUCTURE

• Main Authors: NAKAMURA, TAICHI, FURUSAWA, AKIO, SAKATANI, SHIGEAKI, KITAURA, HIDETOSHI, ISHIMARU, YUKIHIRO
• Format: Patent
• Language: English; French; German
• Published: 28.08.2013
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; MACHINE TOOLS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WELDING; WORKING BY LASER BEAM

Obtaining a semiconductor bonding structure body that has a superior stress alleviation property, and has a heat resistance property at the same time. A bonding structure body in which a semiconductor element (102) and an electrode (103) are bonded via a solder material, wherein a part (212) that allows bonding has a first intermetallic compound layer (207') that has been formed on the electrode side, a second intermetallic compound layer (208') that has been formed on the semiconductor element side, and a third layer (300) that is constituted by a phase (210) containing Sn and a sticks-like intermetallic compound part (209'), which is sandwiched between the two layers of the first intermetallic compound layer (207') and the second intermetallic compound layer (208'), and the sticks-like intermetallic compound part (209') is interlayer-bonded to both of the first intermetallic compound layer (207') and the second intermetallic compound layer (208').