Field-effect transistor with magnetic layer
A field-effect transistor comprises a conductive channel (6) and first and second contacts (8, 9) to the channel, a gate electrode (4) for applying an electric field to the channel and a gate dielectric (5) separating the gate electrode from the channel. The channel comprises non-magnetic material....
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| Main Authors | , , , |
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| Format | Patent |
| Language | English French German |
| Published |
28.08.2013
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A field-effect transistor comprises a conductive channel (6) and first and second contacts (8, 9) to the channel, a gate electrode (4) for applying an electric field to the channel and a gate dielectric (5) separating the gate electrode from the channel. The channel comprises non-magnetic material. The channel has a length, L C . The gate electrode is arranged to gate the channel substantially along the length of the channel. A region (10) of the gate which is proximate to the channel comprises a magnetically-ordered material having a chemical potential which depends on magnetic moment orientation. |
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| AbstractList | A field-effect transistor comprises a conductive channel (6) and first and second contacts (8, 9) to the channel, a gate electrode (4) for applying an electric field to the channel and a gate dielectric (5) separating the gate electrode from the channel. The channel comprises non-magnetic material. The channel has a length, L C . The gate electrode is arranged to gate the channel substantially along the length of the channel. A region (10) of the gate which is proximate to the channel comprises a magnetically-ordered material having a chemical potential which depends on magnetic moment orientation. |
| Author | WUNDERLICH, JOERG JUNGWIRTH, TOMAS CHICCARELLI, CHIARA FERGUSON, ANDREW |
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| Discipline | Medicine Chemistry Sciences Physics |
| DocumentTitleAlternate | Feldeffekttransistor mit magnetischem Schicht Transistor à effet de champ avec une couche magnétique |
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| Notes | Application Number: EP20120157109 |
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| Snippet | A field-effect transistor comprises a conductive channel (6) and first and second contacts (8, 9) to the channel, a gate electrode (4) for applying an electric... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS |
| Title | Field-effect transistor with magnetic layer |
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