Field-effect transistor with magnetic layer

A field-effect transistor comprises a conductive channel (6) and first and second contacts (8, 9) to the channel, a gate electrode (4) for applying an electric field to the channel and a gate dielectric (5) separating the gate electrode from the channel. The channel comprises non-magnetic material....

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Bibliographic Details
Main Authors JUNGWIRTH, TOMAS, WUNDERLICH, JOERG, FERGUSON, ANDREW, CHICCARELLI, CHIARA
Format Patent
LanguageEnglish
French
German
Published 28.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
STATIC STORES
TRANSFORMERS
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Summary:A field-effect transistor comprises a conductive channel (6) and first and second contacts (8, 9) to the channel, a gate electrode (4) for applying an electric field to the channel and a gate dielectric (5) separating the gate electrode from the channel. The channel comprises non-magnetic material. The channel has a length, L C . The gate electrode is arranged to gate the channel substantially along the length of the channel. A region (10) of the gate which is proximate to the channel comprises a magnetically-ordered material having a chemical potential which depends on magnetic moment orientation.
Bibliography:Application Number: EP20120157109