Microelectronic substrate having a buried layer of organic material

The substrate (100) has a support layer (102) and a top layer (106), where the top layer comprises a semiconductor. A layer (104) is made of organic material i.e. photosensitive resin, able to be etched selectively with respect to the semiconductor of the top layer by using a dry etching, and arrang...

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Bibliographic Details
Main Authors BAILLIN, XAVIER, PORNIN, JEAN-LOUIS
Format Patent
LanguageEnglish
French
German
Published 01.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:The substrate (100) has a support layer (102) and a top layer (106), where the top layer comprises a semiconductor. A layer (104) is made of organic material i.e. photosensitive resin, able to be etched selectively with respect to the semiconductor of the top layer by using a dry etching, and arranged between the support layer and the top layer. A getter material layer is arranged between the support layer and the layer of organic material. A dielectric material portion in the layer of organic material forms a closed contour. Independent claims are also included for the following: (1) a method for producing a microelectronic substrate (2) a method for producing a microelectronic device.
Bibliography:Application Number: EP20130154830