MULTILAYER TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING SAME, AS WELL AS THIN-FILM SOLAR CELL AND METHOD FOR MANUFACTURING SAME

• Main Authors: ABE, YOSHIYUKI, SOGABE, KENTARO, YAMANOBE, YASUNORI
• Format: Patent
• Language: English; French; German
• Published: 23.09.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; INSULATORS; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; PERFORMING OPERATIONS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

To provide a multilayer transparent electroconductive film having low resistivity and high transmitting property, and a method for manufacturing the same, as well as a thin-film solar cell and a method for manufacturing the same. The multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by -2.18 × [Al] + 1.74 ‰¦ [Ga] ‰¦ -1.92 × [Al] + 6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by -[Al] + 0.30 ‰¦ [Gas] ‰¦ -2.68 × [Al] +1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn + Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn + Ga).