PLASMA-RESISTANT MEMBER AND METHOD FOR REGENERATING SAME

• Main Authors: TAKAHARA HIDEYUKI, WU ROBERT, KAWAMOTO SATOSHI, NAKAMURA MASAKI
• Format: Patent
• Language: English; French; German
• Published: 03.07.2013
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

Provided is a plasma-resistant member which can be recycled and does not easily produce particles even when exposed to plasma. Specifically provided is a plasma-resistant member which has a predetermined surface profile and is used within a plasma etching chamber. The plasma-resistant member comprises: a first SiC layer (12) that is formed by a CVD method and has a corroded surface by having been exposed to plasma etching; and a second SiC layer (13) that is laminated on the corroded surface of the first SiC layer (12) by a CVD method and has a surface that is machined so as to have the predetermined surface profile.