HEAT TREATMENT METHOD FOR WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS

• Main Authors: TAKAHASHI, SHUJI, EBARA, KOJI, OKA, TETSUYA
• Format: Patent
• Language: English; French; German
• Published: 07.05.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25°C higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided.