Method, apparatus and system for providing improved full well capacity in an image sensor pixel

Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image...

Full description

Saved in:
Bibliographic Details
Main Authors VENEZIA, VINCENT, TAI, HSINIH, MANABE, SOHEI, RHODES, HOWARD, E, KU, KEHIANG, MAO, DULI
Format Patent
LanguageEnglish
French
German
Published 28.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.
Bibliography:Application Number: EP20120190843