METHOD FOR PROVIDING LATERAL THERMAL PROCESSING OF THIN FILMS ON LOW-TEMPERATURE SUBSTRATES

• Main Authors: SCHRODER, KURT, A, WENZ, ROBERT, P
• Format: Patent
• Language: English; French; German
• Published: 10.04.2013
• Subjects: AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR; SHAPING OR JOINING OF PLASTICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.