STRUCTURE AND METHOD FOR MANUFACTURING INTERCONNECT STRUCTURES HAVING SELF-ALIGNED DIELECTRIC CAPS
Interconnect structures having self-aligned dielectric caps are provided. At least one metallization level is formed on a substrate. A dielectric cap is selectively deposited on the metallization level.
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
27.12.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Interconnect structures having self-aligned dielectric caps are provided. At least one metallization level is formed on a substrate. A dielectric cap is selectively deposited on the metallization level. |
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Bibliography: | Application Number: EP20110777742 |