HERMETIC WAFER-TO-WAFER BONDING WITH ELECTRICAL INTERCONNECTION
An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad i...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
27.04.2022
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Online Access | Get full text |
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Abstract | An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad is formed in the first via, the first conductive pad having an exposed top surface lower than first height. A second substrate is coupled to the first substrate, the second substrate having a second via formed in the front side, the via extending from a bottom point in the front side to a second height located at a surface of the front side. A second conductive pad is formed in the second via, the second conductive pad having an exposed top surface lower than second height. The coupled substrates are heated until a portion of one or both conductive pads reflow, dewet, agglomerate, and merge to form an interconnect, hermetic seal, or both depending on the requirements of the device. |
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AbstractList | An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad is formed in the first via, the first conductive pad having an exposed top surface lower than first height. A second substrate is coupled to the first substrate, the second substrate having a second via formed in the front side, the via extending from a bottom point in the front side to a second height located at a surface of the front side. A second conductive pad is formed in the second via, the second conductive pad having an exposed top surface lower than second height. The coupled substrates are heated until a portion of one or both conductive pads reflow, dewet, agglomerate, and merge to form an interconnect, hermetic seal, or both depending on the requirements of the device. |
Author | SMITH, Jonathan, R MATTES, Michael, F RUBEN, David, A |
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Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | HERMETISCHES WAFER-BONDEN MIT ELEKTRISCHER VERBINDUNG COLLAGE HERMÉTIQUE DE PLAQUETTES AVEC INTERCONNEXIONS ÉLECTRIQUES |
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RelatedCompanies | Medtronic, Inc |
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Snippet | An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS DIAGNOSIS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROTHERAPY HUMAN NECESSITIES HYGIENE IDENTIFICATION MAGNETOTHERAPY MEDICAL OR VETERINARY SCIENCE RADIATION THERAPY SEMICONDUCTOR DEVICES SURGERY ULTRASOUND THERAPY |
Title | HERMETIC WAFER-TO-WAFER BONDING WITH ELECTRICAL INTERCONNECTION |
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