HERMETIC WAFER-TO-WAFER BONDING WITH ELECTRICAL INTERCONNECTION

An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad i...

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Bibliographic Details
Main Authors MATTES, Michael, F, SMITH, Jonathan, R, RUBEN, David, A
Format Patent
LanguageEnglish
French
German
Published 27.04.2022
Subjects
BASIC ELECTRIC ELEMENTS
DIAGNOSIS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROTHERAPY
HUMAN NECESSITIES
HYGIENE
IDENTIFICATION
MAGNETOTHERAPY
MEDICAL OR VETERINARY SCIENCE
RADIATION THERAPY
SEMICONDUCTOR DEVICES
SURGERY
ULTRASOUND THERAPY
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Summary:An implantable medical device (IMD) is disclosed. The IMD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad is formed in the first via, the first conductive pad having an exposed top surface lower than first height. A second substrate is coupled to the first substrate, the second substrate having a second via formed in the front side, the via extending from a bottom point in the front side to a second height located at a surface of the front side. A second conductive pad is formed in the second via, the second conductive pad having an exposed top surface lower than second height. The coupled substrates are heated until a portion of one or both conductive pads reflow, dewet, agglomerate, and merge to form an interconnect, hermetic seal, or both depending on the requirements of the device.
Bibliography:Application Number: EP20110720639