PRODUCTION OF A CRYSTALLINE SEMICONDUCTOR MATERIAL

• Main Authors: SCHMID, Christian, KERAT, Uwe, HAHN, Jochem
• Format: Patent
• Language: English; French; German
• Published: 02.01.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CASTING; CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; POWDER METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method of producing a crystalline semiconductor material includes feeding particles of the semiconductor material and/or a precursor compound of the semiconductor material into a gas flow, wherein the gas flow has a sufficiently high temperature to convert the particles of the semiconductor material from a solid into a liquid and/or gaseous state and/or to thermally decompose the precursor compound, condensing out and/or separating the liquid semiconductor material from the gas flow, and converting the liquid semiconductor material to a solid state with formation of mono- or polycrystalline crystal properties.