PRODUCTION OF MONOCRYSTALLINE SEMICONDUCTOR MATERIALS

A method of producing a monocrystalline semiconductor material includes providing a starting material composed of the semiconductor material, transferring the starting material into a heating zone in which a melt composed of the semiconductor material is fed with the starting material, and lowering...

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Bibliographic Details
Main Authors SCHMID, Christian, KERAT, Uwe, HAHN, Jochem
Format Patent
LanguageEnglish
French
German
Published 12.07.2017
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CASTING
CASTING OF METALS
CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
POWDER METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A method of producing a monocrystalline semiconductor material includes providing a starting material composed of the semiconductor material, transferring the starting material into a heating zone in which a melt composed of the semiconductor material is fed with the starting material, and lowering the melt from the heating zone and/or raising the heating zone such that, at a lower end portion of the melt, a solidification front forms along which the semiconductor material crystallizes in a desired structure, wherein the starting material composed of the semiconductor material is provided in liquid form and fed into the melt in liquid form.
Bibliography:Application Number: EP20110714743