Light emitting device with a multi-layer contact structure
A light emitting device includes a light emitting structure (120) comprising a first conductive type semiconductor layer (122), an active layer (124) and a second conductive type semiconductor layer (126), wherein the active layer (124) comprises well- and barrier layers alternatively stacked at lea...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English French German |
Published |
13.05.2020
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A light emitting device includes a light emitting structure (120) comprising a first conductive type semiconductor layer (122), an active layer (124) and a second conductive type semiconductor layer (126), wherein the active layer (124) comprises well- and barrier layers alternatively stacked at least once; a multi-layer contact (200) disposed on at least a predetermined region of the second conductive type semiconductor layer (126), the multi-layer contact (200) comprising at least one layer pair of a first layer comprising InGaN having a first dopant and a second layer comprising GaN having a second dopant; and a first electrode (195) and a second electrode (190) to provide currents to the first and second conductive type semiconductor layer, respectively. |
---|---|
AbstractList | A light emitting device includes a light emitting structure (120) comprising a first conductive type semiconductor layer (122), an active layer (124) and a second conductive type semiconductor layer (126), wherein the active layer (124) comprises well- and barrier layers alternatively stacked at least once; a multi-layer contact (200) disposed on at least a predetermined region of the second conductive type semiconductor layer (126), the multi-layer contact (200) comprising at least one layer pair of a first layer comprising InGaN having a first dopant and a second layer comprising GaN having a second dopant; and a first electrode (195) and a second electrode (190) to provide currents to the first and second conductive type semiconductor layer, respectively. |
Author | Jang, Jung Hun Kim, Byeoung Jo Nam, Seung Keun Lee, Jeong Sik Yim, Jeong Soon |
Author_xml | – fullname: Kim, Byeoung Jo – fullname: Yim, Jeong Soon – fullname: Jang, Jung Hun – fullname: Lee, Jeong Sik – fullname: Nam, Seung Keun |
BookMark | eNrjYmDJy89L5WSw8slMzyhRSM3NLCnJzEtXSEkty0xOVSjPLMlQSFTILc0pydTNSaxMLVJIzs8rSUwuUSguKSpNLiktSuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUamxsbGBpZOhsZEKAEALUgwkw |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | Dispositif électroluminescent avec une structure de contact à multi-couche Lichtemittierende Vorrichtung mit einer mehrlagigen Kontaktstruktur |
ExternalDocumentID | EP2533309B1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_EP2533309B13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 13:58:36 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English French German |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_EP2533309B13 |
Notes | Application Number: EP20120154910 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200513&DB=EPODOC&CC=EP&NR=2533309B1 |
ParticipantIDs | epo_espacenet_EP2533309B1 |
PublicationCentury | 2000 |
PublicationDate | 20200513 |
PublicationDateYYYYMMDD | 2020-05-13 |
PublicationDate_xml | – month: 05 year: 2020 text: 20200513 day: 13 |
PublicationDecade | 2020 |
PublicationYear | 2020 |
RelatedCompanies | LG Innotek Co., Ltd |
RelatedCompanies_xml | – name: LG Innotek Co., Ltd |
Score | 3.2730713 |
Snippet | A light emitting device includes a light emitting structure (120) comprising a first conductive type semiconductor layer (122), an active layer (124) and a... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Light emitting device with a multi-layer contact structure |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200513&DB=EPODOC&locale=&CC=EP&NR=2533309B1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LSwMxEB5KFfWmVbG-yEH2tth9tVlhEboPith2kSq9lWSbQKFsi13x7zsTt9WLQg4hCWES-DLvCcAd14K8db7taUegguIENveFQuBpV3KNTVPu8HDUHbz6T9Ng2oDFNhfG1An9NMUREVEF4r0y7_X6x4iVmNjKzb1c4NDqMZtEiVVrx2QicTwr6UdpPk7GsRXH2LNGL5GLYo3XCfuoKO2RFE1l9tO3PiWlrH9zlOwY9nPcrKxOoKHKFhzG24_XWnAwrP3d2K2htzmFh2dSoxmuMpHKbK4I44zsqEwwExdoLwUK0Iyiz0VRse_SsB_v6gxYlk7igY1EzHYHnqX5jlzvHJrlqlQXwHgR-rLHFXdF1--JuUTmGvhaFdIVoegEbWj_uc3lP3NXcEQ3Ry5xx7uGJhKnbpDTVvLW3NEX1ZyDlQ |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFetNq2J97kFyCzavJhGCkBdRkzRIlN7CJt1AQdJiI_59Z9e0elHIYcmGZXbgy-w3rwW4sWrKo3W6rNUKRYKiGLKlU4bAq9XSqvGpee1wkk6iF_1xZsx6sNjUwog-oZ-iOSIiqkK8t-J_vfpxYvkit3J9Wy7w1fI-zB1f6tgxd5EomuS7TpBN_akneR6OpPTZUfFYo41tF4nSjomMUDClV5cXpax-W5TwAHYzXKxpD6HHmiEMvM3Fa0PYS7p4Nw476K2P4C7mNJrgVyJTmcwZxzjhflRCicgLlN8oHqAJzz6nVUu-W8N-vLNjIGGQe5GMQhTbDRdBthVXO4F-s2zYKRCrsvXStJil0olu0nmJxtXQa1aVKrXp2BjB6M9lzv6Zu4ZBlCdxET-kT-ewz7XIw-OKdgF9FJRdotVtyyuhry8iAYZ_ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Light+emitting+device+with+a+multi-layer+contact+structure&rft.inventor=Kim%2C+Byeoung+Jo&rft.inventor=Yim%2C+Jeong+Soon&rft.inventor=Jang%2C+Jung+Hun&rft.inventor=Lee%2C+Jeong+Sik&rft.inventor=Nam%2C+Seung+Keun&rft.date=2020-05-13&rft.externalDBID=B1&rft.externalDocID=EP2533309B1 |