Light emitting device with a multi-layer contact structure

A light emitting device includes a light emitting structure (120) comprising a first conductive type semiconductor layer (122), an active layer (124) and a second conductive type semiconductor layer (126), wherein the active layer (124) comprises well- and barrier layers alternatively stacked at lea...

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Bibliographic Details
Main Authors Kim, Byeoung Jo, Yim, Jeong Soon, Jang, Jung Hun, Lee, Jeong Sik, Nam, Seung Keun
Format Patent
LanguageEnglish
French
German
Published 13.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting device includes a light emitting structure (120) comprising a first conductive type semiconductor layer (122), an active layer (124) and a second conductive type semiconductor layer (126), wherein the active layer (124) comprises well- and barrier layers alternatively stacked at least once; a multi-layer contact (200) disposed on at least a predetermined region of the second conductive type semiconductor layer (126), the multi-layer contact (200) comprising at least one layer pair of a first layer comprising InGaN having a first dopant and a second layer comprising GaN having a second dopant; and a first electrode (195) and a second electrode (190) to provide currents to the first and second conductive type semiconductor layer, respectively.
Bibliography:Application Number: EP20120154910