Multi-layer n-type stack for cadmium telluride based thin film photovoltaic devices and methods of making

• Main Authors: FELDMAN-PEABODY, SCOTT DANIEL, GOSSMAN, ROBERT DWAYNE
• Format: Patent
• Language: English; French; German
• Published: 05.12.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Thin film photovoltaic devices (10) are provided that generally include a transparent conductive oxide layer (14) on the glass (12), a multi-layer n-type stack (16) on the transparent conductive oxide layer (14), and a cadmium telluride layer (20) on the multi-layer n-type stack (16). The multi-laye...