Multi-layer n-type stack for cadmium telluride based thin film photovoltaic devices and methods of making

Thin film photovoltaic devices (10) are provided that generally include a transparent conductive oxide layer (14) on the glass (12), a multi-layer n-type stack (16) on the transparent conductive oxide layer (14), and a cadmium telluride layer (20) on the multi-layer n-type stack (16). The multi-laye...

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Bibliographic Details
Main Authors FELDMAN-PEABODY, SCOTT DANIEL, GOSSMAN, ROBERT DWAYNE
Format Patent
LanguageEnglish
French
German
Published 05.12.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Thin film photovoltaic devices (10) are provided that generally include a transparent conductive oxide layer (14) on the glass (12), a multi-layer n-type stack (16) on the transparent conductive oxide layer (14), and a cadmium telluride layer (20) on the multi-layer n-type stack (16). The multi-layer n-type stack (16) generally includes a first layer (17) and a second layer (18), where the first layer (17) comprises cadmium and sulfur and the second layer (18) comprises cadmium and oxygen. The multi-layer n-type stack (16) can, in certain embodiments, include additional layers (e.g., a third layer (19), a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices (10).
Bibliography:Application Number: EP20120169580