Optocoupler circuit

An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction...

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Bibliographic Details
Main Authors Golubovic, Dusan, Koops, Gerhard, Van Dalen, Rob, Vanhoucke, Tony
Format Patent
LanguageEnglish
French
German
Published 28.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.
Bibliography:Application Number: EP20120155336