Plasma processing apparatus and method

A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so a...

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Main Authors OOYA, YOSHINOBU, SUGIMOTO, MASARU, SATO, MANABU, YAMAZAKI, HIROKI, OHTANI, RYUJI, KIBI, KAZUO, HINATA, KUNIHIKO, YAMAZAWA, YOHEI, KOSHIISHI, AKIRA, IWATA, MANABU, MATSUMOTO, NAOKI, HAYAMI, TOSHIHIRO, KOSHIMIZU, CHISHIO, KOBAYASHI, NORIYUKI, HANAOKA, HIDETOSHI, YANO, DAISUKE, SAITO, MASASHI
Format Patent
LanguageEnglish
French
German
Published 25.07.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.
Bibliography:Application Number: EP20120159425