Light emitting diode having vertical topology
Disclosed herein is an LED having vertical topology. In particular, provided is an LED having vertical topology which is capable of improving a luminous efficiency and reliability thereof and is also capable of achieving mass productivity, and a method of making the same. The method includes forming...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English French German |
Published |
30.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Disclosed herein is an LED having vertical topology. In particular, provided is an LED having vertical topology which is capable of improving a luminous efficiency and reliability thereof and is also capable of achieving mass productivity, and a method of making the same. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate. |
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Bibliography: | Application Number: EP20120156524 |