Method of making light emitting diodes having vertical topology

Disclosed herein is an LED having vertical topology. In particular, provided is an LED having vertical topology which is capable of improving a luminous efficiency and reliability thereof and is also capable of achieving mass productivity, and a method of making the same. The method includes forming...

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Bibliographic Details
Main Authors Jang, Jun Ho, Choi, Jae Wan, Park, Jong Kook, Bae, Duk Kyu, Cho, Hyun Kyong, Kim, Sun Jung, Lee, Jeong Soo
Format Patent
LanguageEnglish
French
German
Published 02.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein is an LED having vertical topology. In particular, provided is an LED having vertical topology which is capable of improving a luminous efficiency and reliability thereof and is also capable of achieving mass productivity, and a method of making the same. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
Bibliography:Application Number: EP20120156517