Amorphous oxide and field effect transistor

• Main Authors: NOMURA, KENJI, NAKAGAWA, KATSUMI, KAMIYA, TOSHIO, SANO, MASAFUMI, HOSONO, HIDEO
• Format: Patent
• Language: English; French; German
• Published: 16.05.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is an oxide comprising In, Ga, and Zn. The amorphous oxide film comprises a microcrystal that is surrounded by said amorphous oxide; or the oxide chemical composition changes in the layer thickness direction in the film interior such that there is a region with a first chemical composition and a region with a second chemical composition other than said first composition; or the oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or the oxide comprises at least one element selected from the group consisting of Ti, Ru, and F.