Amorphous oxide and field effect transistor

A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is an oxide comprising In, Ga, and Zn. The amorphous oxide fil...

Full description

Saved in:
Bibliographic Details
Main Authors NOMURA, KENJI, NAKAGAWA, KATSUMI, KAMIYA, TOSHIO, SANO, MASAFUMI, HOSONO, HIDEO
Format Patent
LanguageEnglish
French
German
Published 16.05.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is an oxide comprising In, Ga, and Zn. The amorphous oxide film comprises a microcrystal that is surrounded by said amorphous oxide; or the oxide chemical composition changes in the layer thickness direction in the film interior such that there is a region with a first chemical composition and a region with a second chemical composition other than said first composition; or the oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or the oxide comprises at least one element selected from the group consisting of Ti, Ru, and F.
Bibliography:Application Number: EP20110009312