PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER

A process of forming a front-grid electrode on a silicon wafer having an ARC layer wherein thin parallel fingers lines that form the front side grid electrode are double printed from a metal paste, and the metal pastes used for the first and second printing differ in their content of glass frit plus...

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Bibliographic Details
Main Authors ANDERSON, DAVID, KENT, HANG, KENNETH, WARREN, LAUDISIO, GIOVANNA, ANDERSON, RUSSELL, DAVID, KAO, SHIH-MING, LIN, CHENG-NAN, WU, CHUN-KWEI
Format Patent
LanguageEnglish
French
German
Published 28.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
CABLES
CONDUCTORS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INSULATORS
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SEMICONDUCTOR DEVICES
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Summary:A process of forming a front-grid electrode on a silicon wafer having an ARC layer wherein thin parallel fingers lines that form the front side grid electrode are double printed from a metal paste, and the metal pastes used for the first and second printing differ in their content of glass frit plus optionally present other inorganic additives.
Bibliography:Application Number: EP20100722879