INTEGRATED SENSOR

An integrated sensor includes a magnetoresistance element electrically coupled to a device disposed on or integrated in a silicon substrate. A conductor is provided proximate to the magnetoresistance element. The integrated sensor can be used to provide various devices, such as a current sensor, a m...

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Bibliographic Details
Main Authors Vig, Ravi, Forrest, Glenn, Dickinson, Richard, Stauth, Jason
Format Patent
LanguageEnglish
French
German
Published 21.07.2021
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Summary:An integrated sensor includes a magnetoresistance element electrically coupled to a device disposed on or integrated in a silicon substrate. A conductor is provided proximate to the magnetoresistance element. The integrated sensor can be used to provide various devices, such as a current sensor, a magnetic field sensor, or an isolator. Further, the integrated sensor can be used in an open loop configuration or in a closed loop configuration in which an additional conductor is provided. The magntoresistance element may be formed over the silicon substrate or on a separate, non-silicon substrate. Also described is an integrated sensor comprising a substrate, a magnetic field transducer disposed over a surface of the substrate, and a conductor disposed over the surface of the substrate proximate to the magnetic field transducer. The magnetic field transducer can be a Hall effect transducer or a magnetoresistance element.
Bibliography:Application Number: EP20110192122