PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

• Main Authors: ISSHIKI, KAZUHIKO, KISHIMOTO, KATSUSHI
• Format: Patent
• Language: English; French; German
• Published: 07.03.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A first step of supplying, for a certain period of time, AC electric power having a first value smaller than a value needed to perform plasma processing is carried out, in order to generate a plasma discharge between a cathode electrode (102) and an anode electrode (103). Subsequent to the first step, a second step of supplying AC electric power greater than the first value is carried out. The second step includes the step of supplying, for a certain period of time, AC electric power having a second value at which the plasma processing can be performed. Subsequent to the second step, a third step of supplying AC electric power having a third value greater than the second value for a certain period of time is carried out.