Manufacturing method of via-less thin film resistor with a dielectric cap

The present disclosure is directed to a thin film resistor structure (100) that includes a resistive element (102) electrically connecting first conductor layers (106a,b) of adjacent interconnect structures (104a,b). The resistive element is covered by a dielectric cap layer (105) that acts as a sta...

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Bibliographic Details
Main Authors Niu, Chengyu, Lim, Ting Fang, Le Neel, Olivier, Leung, Calvin
Format Patent
LanguageEnglish
French
German
Published 15.04.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
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Summary:The present disclosure is directed to a thin film resistor structure (100) that includes a resistive element (102) electrically connecting first conductor layers (106a,b) of adjacent interconnect structures (104a,b). The resistive element is covered by a dielectric cap layer (105) that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer (124) over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.
Bibliography:Application Number: EP20110178597