HIGH EFFICIENCY EPITAXIAL CHEMICAL VAPOR DEPOSITION (CVD) REACTOR
The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may...
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Main Author | |
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Format | Patent |
Language | English French German |
Published |
02.01.2013
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Subjects | |
Online Access | Get full text |
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Summary: | The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization. |
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Bibliography: | Application Number: EP20100765064 |