MULTI-COLUMN ELECTRON BEAM LITHOGRAPHY SYSTEM AND ELECTRON BEAM ORBIT ADJUSTING METHOD THEREOF
A multi-column electron beam lithography apparatus includes multiple columns, each including a mask having several aperture patterns; a selective deflector provided on the mask's incident side to deflect an electron beam to select an aperture pattern; a bending back deflector provided on the ma...
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Main Author | |
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Format | Patent |
Language | English French German |
Published |
23.11.2011
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Subjects | |
Online Access | Get full text |
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