MULTI-COLUMN ELECTRON BEAM LITHOGRAPHY SYSTEM AND ELECTRON BEAM ORBIT ADJUSTING METHOD THEREOF

• Main Author: YAMADA, AKIO
• Format: Patent
• Language: English; French; German
• Published: 23.11.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

A multi-column electron beam lithography apparatus includes multiple columns, each including a mask having several aperture patterns; a selective deflector provided on the mask's incident side to deflect an electron beam to select an aperture pattern; a bending back deflector provided on the mask's exit side to bend the beam passed through the pattern back to the column optical axis; and an electron beam trajectory adjustment unit to adjust deflection efficiencies of the deflectors without the mask installed to allow the beam deflected toward any positions in a deflection region by the selective deflector to be bent back and applied to the same position on a sample by the bending back deflector, and to adjust the deflection efficiency of the selective deflector with the mask installed to allow the beam to be deflected toward any pattern of the mask, while maintaining a relationship between the deflection efficiencies.