ELECTROMAGNETIC RADIATION SENSOR AND METHOD OF MANUFACTURE
A method of forming a semiconductor sensor in one embodiment includes providing a substrate, forming a reflective layer on the substrate, forming a sacrificial layer on the reflective layer, forming an absorber layer with a thickness of less than about 50 nm on the sacrificial layer, forming an abso...
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Main Author | |
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Format | Patent |
Language | English French German |
Published |
16.11.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A method of forming a semiconductor sensor in one embodiment includes providing a substrate, forming a reflective layer on the substrate, forming a sacrificial layer on the reflective layer, forming an absorber layer with a thickness of less than about 50 nm on the sacrificial layer, forming an absorber in the absorber layer integrally with at least one suspension leg, and removing the sacrificial layer. |
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Bibliography: | Application Number: EP20100701168 |