UTILISATION OF TRENCH-MOS-BARRIER-SCHOTTKY-DIODES (TMBS) AS RECTIFYING ELEMENTS OF A RECTIFIER BRIDGE CIRCUIT FOR AN ELECTRIC GENERATOR OF A CAR

The circuit has rectifying elements exhibiting reverse voltage drift when the elements are operated during breakdown of the voltage. The elements comprise a combination of pn-diodes, metal-oxide-semiconductor (MOS)-transistor and MOS-structure i.e. trench-MOS-structure, to determine the breakdown. T...

Full description

Saved in:
Bibliographic Details
Main Authors Goerlach, Alfred, Spitz, Richard
Format Patent
LanguageEnglish
French
German
Published 08.05.2019
Subjects
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The circuit has rectifying elements exhibiting reverse voltage drift when the elements are operated during breakdown of the voltage. The elements comprise a combination of pn-diodes, metal-oxide-semiconductor (MOS)-transistor and MOS-structure i.e. trench-MOS-structure, to determine the breakdown. The trench-MOS-structure is designed as a press diode i.e. trench-MOS-barier-schottky-diode, which exhibits a schottky-barrier of about 0.65 electron volt to 0.7 electron volt. The schottky-diode comprises schottky-barrier metal e.g. nickel or nickel silicide, and trenches of about 1-3 micrometer.
Bibliography:Application Number: EP20110156122