Method of forming a light emitting diode having an improved external extraction based upon crystallographic faceted surfaces

A light-emitting diode (20) with improved light extraction is made by anisotropically etching the surface of a Group III nitride layer (33,35) to develop crystal facets on the group III nitride surface (24,32) in which the facets are along a small integer Miller index plane of the Group III nitride...

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Bibliographic Details
Main Authors Edmond, John A, Slater, David B. Jr, Kong, Hua-Shuang, Donofrio, Matthew
Format Patent
LanguageEnglish
French
German
Published 04.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light-emitting diode (20) with improved light extraction is made by anisotropically etching the surface of a Group III nitride layer (33,35) to develop crystal facets on the group III nitride surface (24,32) in which the facets are along a small integer Miller index plane of the Group III nitride surface.
Bibliography:Application Number: EP20110164343