Insulated gate semiconductor device and method of manufacturing the same

• Main Authors: HERINGA, ANCO, SONSKY, JAN
• Format: Patent
• Language: English; French; German
• Published: 04.06.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device comprises a substrate including a first region and a second region of a first conductivity type and a third region between the first and second regions of a second conductivity type opposite to the first conductivity type, and being covered by a dielectric layer. A plurality o...