Insulated gate semiconductor device and method of manufacturing the same

A semiconductor device comprises a substrate including a first region and a second region of a first conductivity type and a third region between the first and second regions of a second conductivity type opposite to the first conductivity type, and being covered by a dielectric layer. A plurality o...

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Bibliographic Details
Main Authors HERINGA, ANCO, SONSKY, JAN
Format Patent
LanguageEnglish
French
German
Published 04.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprises a substrate including a first region and a second region of a first conductivity type and a third region between the first and second regions of a second conductivity type opposite to the first conductivity type, and being covered by a dielectric layer. A plurality of trenches laterally extend between the third and second region, are filled with an insulating material, and are separated by active stripes with a doping profile having a depth not exceeding the depth of the trenches wherein each trench terminates before reaching the dielectric layer and is separated from the third region by a substrate portion such that the respective boundaries between the substrate portions and the trenches are not covered by the dielectric layer. A method for manufacturing such a semiconductor device is also disclosed.
Bibliography:Application Number: EP20090741426