Voltage control circuit for phase change memory

The present invention relates to a voltage control circuit, semiconductor memory device, and method of controlling a voltage in a phase-change memory, wherein the voltage control circuit generates a controlled voltage which can be above the logic supply voltage. This voltage can limit the bit line v...

Full description

Saved in:
Bibliographic Details
Main Author CUPPENS, ROGER
Format Patent
LanguageEnglish
French
German
Published 22.06.2011
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:The present invention relates to a voltage control circuit, semiconductor memory device, and method of controlling a voltage in a phase-change memory, wherein the voltage control circuit generates a controlled voltage which can be above the logic supply voltage. This voltage can limit the bit line voltage in a phase-change memory to allow the use of smaller transistors in the memory cells and in the program current part of the circuit. This results in smaller memory cells and modules.
Bibliography:Application Number: EP20090180010