SILICON SINGLE CRYSTAL PULL-UP APPARATUS

• Main Authors: KUBOTA, TOSHIMICHI, FUKUDA, TOMOHIRO, KAWAZOE, SHINICHI, OGAWA, FUKUO, NARUSHIMA, YASUHITO
• Format: Patent
• Language: English; French; German
• Published: 11.05.2011
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Provided is a silicon single crystal pull-up apparatus which is compact and has a raising and lowering means with which the position of a sample tube can be easily corrected. A silicon single crystal pull-up apparatus (1) is used to pull up a doped silicon single crystal from a melt by means of the Czochralski process and includes a pull-up furnace (2), a sample chamber (20) which is externally mounted on the pull-up furnace (2) and houses a sublimable dopant (23), a blocking means (24) for thermally isolating the interior of the pull-up furnace (2) and the interior of the sample chamber (20), a sample tube (21) which can be raised and lowered between the interior of the sample chamber (20) and the interior of the pull-up furnace (2), and a raising and lowering means (25) which is provided with guide rails (25b (25c, 25d)) on which the sample tube (21) can slide and a wire mechanism (25a) by which the sample tube (21) is raised and lowered along the guide rails (25b).