TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

A trench-gate semiconductor device configuration is provided which is suitable for incorporation in integrated circuits, together with methods for its manufacture. A self-aligned drain region (12a) is provided below the device trench (18). The manufacturing methods include etching an initial trench...

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Bibliographic Details
Main Authors SAARNILEHTO, Eero, SONSKY, Jan
Format Patent
LanguageEnglish
French
German
Published 23.02.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A trench-gate semiconductor device configuration is provided which is suitable for incorporation in integrated circuits, together with methods for its manufacture. A self-aligned drain region (12a) is provided below the device trench (18). The manufacturing methods include etching an initial trench into a semiconductor body (8), and annealing so as to cause migration of material such that a shallower trench with a cavity (36) below it are formed. The drain region is then formed in the cavity.
Bibliography:Application Number: EP20090754266