INTERCONNECT STRUCTURE FOR INTEGRATED CIRCUITS HAVING IMPROVED ELECTROMIGRATION CHARACTERISTICS AND METHOD OF MAKING SUCH STRUCTURE

• Main Authors: SANKARAN, SUJATHA, HU, CHAO-KUN, SIMON, ANDREW, H, FILIPPI, RONALD, CHANDRA, KAUSHIK, GRUNOW, STEPHAN, STANDAERT, THEODORUS
• Format: Patent
• Language: English; French; German
• Published: 16.02.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An interconnect structure for an integrated circuit (IC) device includes an elongated, electrically conductive line comprising one or more segments formed at a first width, w1, and one or more segments formed at one or more additional widths, w2 . . . wN, with the first width being narrower than each of the one or more additional widths; wherein the relationship of the total length, L1, of the one or more conductive segments formed at the first width to the total lengths, L2 . . . LN, of the one or more conductive segments formed at the one or more additional widths is selected such that, for a given magnitude of current carried by the conductive line, a critical length with respect to an electromigration short-length effect benefit is maintained such that a total length of the conductive line, L=L1+L2+ . . . +LN, meets a minimum desired design length regardless of the critical length.