Thermoelectric active materials and generators containing the same
The thermoelectric generator comprises a p- or n-doped semiconductor material, which is a ternary material from combination of two components of material classes. The semiconductor material is a binary or ternary alloy from the material class. The p- or n-doping is carried out through choice of the...
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Main Author | |
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Format | Patent |
Language | English French German |
Published |
27.04.2011
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Subjects | |
Online Access | Get full text |
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Summary: | The thermoelectric generator comprises a p- or n-doped semiconductor material, which is a ternary material from combination of two components of material classes. The semiconductor material is a binary or ternary alloy from the material class. The p- or n-doping is carried out through choice of the quantity ratio of the components or the p-doping is carried out with alkali metals and the n-doping is carried out with antimony, bismuth, selenium, tellurium, bromine or iodine. Independent claims are included for: (1) a semiconductor material; (2) a method for the production of semiconductor materials; (3) a method for combinatorial production and testing of semiconductor materials; and (4) an array of different semiconductor materials. |
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Bibliography: | Application Number: EP20100182070 |