Thin-film transistor used as heating element for microreaction chamber

• Main Author: BRYANT, FRANK R
• Format: Patent
• Language: English; French; German
• Published: 08.12.2010
• Subjects: BASIC ELECTRIC ELEMENTS; BLASTING; CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CORRECTION OF TYPOGRAPHICAL ERRORS; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; HEATING; i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; LIGHTING; LINING MACHINES; MEASURING; MECHANICAL ENGINEERING; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES; MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PHYSICS; PRINTING; RANGES; SELECTIVE PRINTING MECHANISMS; SEMICONDUCTOR DEVICES; STAMPS; TESTING; THEIR RELEVANT APPARATUS; TRANSPORTING; TYPEWRITERS; VENTILATING; WEAPONS

A method of making a thin-film semiconductor heater assembly comprising: forming a gate electrode (20) within the semiconductor substrate; forming a gate dielectric over the gate electrode; forming a layer of silicon (61) as a channel region overlying the gate dielectric; doping source (16)and drain (12) regions adjacent to the channel region to have low resistivity to obtain a transistor; forming a heat responsive reaction chamber (36) over the resistive region; characterised by: using the channel of the thin-film semiconductor heater assembly as the heating element for a microreaction chamber.