Method for fabricating a finfet with separate gates

The present invention relates to a FinFET with separate gates and to a method for fabricating the same. A dielectric gate-separation layer between first and second gate electrodes has an extension in a direction pointing from a first to a second gate layer that is smaller than a lateral extension of...

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Bibliographic Details
Main Authors SURDEANU, RADU, SONSKY, JAN
Format Patent
LanguageEnglish
French
German
Published 24.11.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a FinFET with separate gates and to a method for fabricating the same. A dielectric gate-separation layer between first and second gate electrodes has an extension in a direction pointing from a first to a second gate layer that is smaller than a lateral extension of the fin between its opposite lateral faces. This structure corresponds with a processing method that starts from a covered basic FinFET structure with a continuous first gate layer, and proceeds to remove parts of the first gate layer and of a first gate-isolation layer through a contact opening to the gate layer. Subsequently, a replacement gate-isolation layer that at the same time forms the gate separation layer fabricated, followed by filling the tunnel with a replacement gate layer and a metal filling.
Bibliography:Application Number: EP20090711153