METHOD FOR MANUFACTURING NANOWIRE BY USING STRESS-INDUCED GROWTH
Provided is a method for manufacturing a nanowire using stress-induced growth. The method includes: providing a substrate with an intermediate layer formed thereon; forming thin film on the intermediate layer, wherein the thin film made of material having more than 2×10−6/° C. of thermal expansion c...
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Main Authors | , , , , , |
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Format | Patent |
Language | English French German |
Published |
26.10.2011
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Subjects | |
Online Access | Get full text |
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Summary: | Provided is a method for manufacturing a nanowire using stress-induced growth. The method includes: providing a substrate with an intermediate layer formed thereon; forming thin film on the intermediate layer, wherein the thin film made of material having more than 2×10−6/° C. of thermal expansion coefficient difference from the intermediate layer; inducing tensile stress due to the thermal expansion coefficient difference between the thin film and the substrate by performing a heat treatment on the substrate with the thin film formed; and growing single-crystalline nanowire of the material by inducing compressive stress at the thin film through cooling of the substrate. |
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Bibliography: | Application Number: EP20070855359 |