SEMI-CONDUCTOR STRUCTURE AND METHOD FOR THE PRODUCTION OF A SEMI-CONDUCTOR STRUCTURE

• Main Authors: HERMLE, MARTIN, BENICK, JAN, SCHULTZ-WITTMANN, OLIVER
• Format: Patent
• Language: English; French; German
• Published: 06.10.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a semi-conductor structure, comprising an n metallization and a p metallization (7), and a semi-conductor substrate having an n-doped base region (1) and a p-doped emitter region (2) adjoining the same at least partially for configuring an emitter/base p-n junction, wherein the emitter region (2) extends at least partially approximately parallel to an emitter surface (2b) of the semi-conductor substrate, and the n metallization is connected to the base region (1), and the p metallization (7) is connected to the emitter region (2) in an electrically conductive manner. It is essential to the invention that the semi-conductor structure further comprises an n-doped passivation region (5), which is disposed at least partially between the emitter surface (2b) and the emitter region (2), wherein the passivation region (5) is neither connected to the n metallization nor to the p metallization (7) in an electrically conductive manner. The invention further relates to a method for the production of such a semi-conductor structure.