SEMI-CONDUCTOR STRUCTURE AND METHOD FOR THE PRODUCTION OF A SEMI-CONDUCTOR STRUCTURE
The invention relates to a semi-conductor structure, comprising an n metallization and a p metallization (7), and a semi-conductor substrate having an n-doped base region (1) and a p-doped emitter region (2) adjoining the same at least partially for configuring an emitter/base p-n junction, wherein...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
06.10.2010
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a semi-conductor structure, comprising an n metallization and a p metallization (7), and a semi-conductor substrate having an n-doped base region (1) and a p-doped emitter region (2) adjoining the same at least partially for configuring an emitter/base p-n junction, wherein the emitter region (2) extends at least partially approximately parallel to an emitter surface (2b) of the semi-conductor substrate, and the n metallization is connected to the base region (1), and the p metallization (7) is connected to the emitter region (2) in an electrically conductive manner. It is essential to the invention that the semi-conductor structure further comprises an n-doped passivation region (5), which is disposed at least partially between the emitter surface (2b) and the emitter region (2), wherein the passivation region (5) is neither connected to the n metallization nor to the p metallization (7) in an electrically conductive manner. The invention further relates to a method for the production of such a semi-conductor structure. |
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Bibliography: | Application Number: EP20080871574 |