METHOD FOR LOCALISED HETERO-EPITAXY ON A DIELECTRIC, IN PARTICULAR OF GERMANIUM ON OXIDISED SILICON, AND METHOD FOR MAKING A PRODUCTION BASE OF A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT
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| Main Authors | , , , , |
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| Format | Patent |
| Language | English French German |
| Published |
16.11.2016
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| Subjects | |
| Online Access | Get full text |
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| Author | RENARD, CHARLES YAM, VY FOSSARD, FRÉDÉRIC BOUCHIER, DANIEL CAMMILLERI, VINCENZO DAVIDE |
|---|---|
| Author_xml | – fullname: CAMMILLERI, VINCENZO DAVIDE – fullname: RENARD, CHARLES – fullname: YAM, VY – fullname: FOSSARD, FRÉDÉRIC – fullname: BOUCHIER, DANIEL |
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| DocumentTitleAlternate | PROCEDE D'HETERO EPITAXIE LOCALISEE SUR DIELECTRIQUE, EN PARTICULIER DE GERMANIUM SUR SILICIUM OXYDE, ET PROCEDE DE REALISATION D'UNE BASE DE FABRICATION DE CIRCUIT INTEGRE HOMOGENE OU HETEROGENE VERFAHREN FÜR LOKALISIERTE HETEROEPITAXIE AUF EINEM DIELEKTRIKUM, IM BESONDEREN VON GERMANIUM AUF OXIDIERTEM SILICIUM, SOWIE VERFAHREN ZUR HERSTELLUNG EINER PRODUKTIONSBASIS EINER HOMOGENEN ODER HETEROGENEN INTEGRIERTEN SCHALTUNG |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | METHOD FOR LOCALISED HETERO-EPITAXY ON A DIELECTRIC, IN PARTICULAR OF GERMANIUM ON OXIDISED SILICON, AND METHOD FOR MAKING A PRODUCTION BASE OF A HOMOGENEOUS OR HETEROGENEOUS INTEGRATED CIRCUIT |
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